Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques

Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques Yu Wang, Chin-Yi Chen, Gerhard Klimeck, Michelle Y. Simmons & Rajib Rahman Scientific Reports 6:31830; doi: 10.1038/srep31830; published online 23 August 2016; updated on 30 November 2016 This Article contains errors in Figure 4 where the hyperfine values for the donor separations along the [110] direction were calculated incorrectly. The correct Figure 4 appears below as Figure 1. As a result, in the Results and Discussions section, “From Fig. 4 we can see that Aij of a P-donor pair in silicon with one bound electron can vary from ~366.0 MHz to ~48.9 MHz within a 5 nm separation range”. should read: “From Fig. 4 we can see that Aij of a P-donor pair in silicon with one bound electron can vary from ~287.4 MHz to ~48.9 MHz within a 5 nm separation range”.